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| AOU408 N-Channel Enhancement Mode Field Effect Transistor General Description The AOU408 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in high voltage synchronous rectification , load switching and general purpose applications. Standard Product AOU408 is Pbfree (meets ROHS & Sony 259 specifications). AOU408L is a Green Product ordering option. AOU408 and AOU408L are electrically identical. Features VDS (V) = 105V ID = 40 A (VGS =10V) RDS(ON) < 28 m (VGS =10V) @ 20A RDS(ON) < 31 m (VGS = 6V) TO-251 D Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current C C C Maximum 105 25 40 28 100 20 200 100 50 -55 to 175 Units V V A A mJ W C TC=25C TC=100C ID IDM IAR EAR PD TJ, TSTG TC=25C Repetitive avalanche energy L=0.1mH Power Dissipation B TC=100C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Case B Steady-State Steady-State Symbol RJA RJC Typ 65 1 Max 80 1.5 Units C/W C/W Alpha & Omega Semiconductor, Ltd. AOU408 Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter Conditions ID=10mA, VGS=0V VDS=84V, VGS=0V TJ=55C VDS=0V, VGS=25V VDS=VGS, ID=250A VGS=10V, VDS=5V VGS=10V, ID=20A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=6V, ID=20A Forward Transconductance VDS=5V, ID=20A Diode Forward Voltage IS=1A, VGS=0V Maximum Body-Diode Continuous Current TJ=125C 2.5 100 21.5 32 24 50 0.73 1 55 2038 VGS=0V, VDS=25V, f=1MHz VGS=0V, VDS=0V, f=1MHz 204 85 1.3 38.5 VGS=10V, VDS=50V, ID=20A 8 10 12.7 VGS=10V, VDS=50V, RL=2.7, RGEN=3 IF=20A, dI/dt=100A/s 8.2 31.5 11.2 59.6 161 74 1.56 46 2445 28 40 31 3.2 Min 105 1 5 100 4 Typ Max Units V A nA V A m m S V A pF pF pF nC nC nC ns ns ns ns ns nC STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr tD(off) tf trr Qrr Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/s A: The value of R JA is measured with the device in a still air environment with T A =25C. B. The power dissipation P D is based on T J(MAX)=175C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175C. D. The R JA is the sum of the thermal impedence from junction to case R JC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX)=175C. G. The maximum current rating is limited by bond-wires. Rev2: August 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE Alpha & Omega Semiconductor, Ltd. AOU408 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 10V 6V 60 ID (A) ID(A) 125C 10 5V 20 VGS=4.5V 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics 40 2.4 2.2 Normalized On-Resistance 2 1.8 1.6 1.4 1.2 1 10 0 10 20 30 40 0.8 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 60 ID=20A 1.0E+01 50 125C RDS(ON) (m) IS (A) 40 1.0E+00 1.0E-01 25C 1.0E-02 30 1.0E-03 25C 20 4 8 12 16 20 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 1.0E-04 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics 125C 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature VGS=6V,20A VGS=10V, 20A 0 2 2.5 3 3.5 4 4.5 5 25C 20 80 VDS=5V 40 VGS(Volts) Figure 2: Transfer Characteristics RDS(ON) (m) 30 VGS=6V 20 VGS=10V 1.0E+02 Alpha & Omega Semiconductor, Ltd. AOU408 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 3 10 VDS=50V ID=20A Capacitance (nF) 2 8 VGS (Volts) Ciss 6 4 1 Coss Crss 2 0 0 10 20 30 40 Qg (nC) Figure 7: Gate-Charge Characteristics 1000 TJ(Max)=175C, TA=25C 0 0 40 60 80 VDS (Volts) Figure 8: Capacitance Characteristics 20 100 300 TJ(Max)=175C TA=25C 100 ID (Amps) 10 RDS(ON) limited 1 100s 1ms, DC Power (W) 200 100 0.1 0.1 10 100 1000 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 1 0 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) 10 ZJC Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJC.RJC RJC=1.5C/W 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD Ton Single Pulse T 0.01 0.00001 0.0001 0.001 0.01 0.1 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. AOU408 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 t A 150 = L BV I D - V DD ID(A), Peak Avalanche Current Power Dissipation (W) 0.001 40 TA=150C TA=25C 100 20 50 0 0.000001 0 0.00001 0.0001 0 25 50 75 100 125 150 175 TCASE (C) Figure 13: Power De-rating (Note B) Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability 50 40 Current rating ID(A) 30 20 10 0 0 25 50 75 100 125 150 175 TCASE (C) Figure 14: Current De-rating (Note B) Alpha & Omega Semiconductor, Ltd. |
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